专利名称：Fabrication method for alignment film发明人：Chih-Wei Chen,Chun-Hung Lin,Huang-Chin
Tang,Yun-Chuan Tu,Ying-Fang Chang,Yu-Jung Shih
申请号：US11505855申请日：20060818
公开号：US20070148988A1公开日：20070628
专利附图：
摘要：A fabrication method for an alignment film is proposed. A film is deposited on asubstrate by an atmosphere plasma in a predetermined direction at a predetermined
angle, while moving the substrate and the atmosphere plasma relative to each other.Thereby, a uniform isotropic alignment film with strong anchoring energy is formed andthe pre-tilt angle can be designed according to the need. Problems such as static chargeand dust generated during a conventional rubbing process are prevented. In addition,since the above fabrication method eliminates the need of vacuum devices that arerequired in conventional ion beam alignment and plasma beam alignment processes, thefabrication method can be used to fabricate large sized alignment film. Moreover,fabrication cost is lowered through the use of the fabrication method.
申请人：Chih-Wei Chen,Chun-Hung Lin,Huang-Chin Tang,Yun-Chuan Tu,Ying-FangChang,Yu-Jung Shih
地址：Hsinchu Hsien TW,Hsinchu Hsien TW,Hsinchu Hsien TW,Hsinchu HsienTW,Hsinchu Hsien TW,Hsinchu Hsien TW
国籍：TW,TW,TW,TW,TW,TW
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