Methods of forming a metal telluride material, rel

专利名称：Methods of forming a metal telluride

material, related methods of forming asemiconductor device structure, and relatedsemiconductor device structures

发明人：Timothy A. Quick,Stefan Uhlenbrock,Eugene

P Marsh

申请号：US14252959申请日：20140415公开号：US09029856B2公开日：20150512

专利附图：

摘要：Accordingly, a method of forming a metal chalcogenide material may compriseintroducing at least one metal precursor and at least one chalcogen precursor into achamber comprising a substrate, the at least one metal precursor comprising an amine orimine compound of an alkali metal, an alkaline earth metal, a transition metal, a post-transition metal, or a metalloid, and the at least one chalcogen precursor comprising ahydride, alkyl, or aryl compound of sulfur, selenium, or tellurium. The at least one metalprecursor and the at least one chalcogen precursor may be reacted to form a metalchalcogenide material over the substrate. A method of forming a metal telluridematerial, a method of forming a semiconductor device structure, and a semiconductordevice structure are also described.

申请人：Micron Technology, Inc.

地址：Boise ID US

国籍：US

代理机构：TraskBritt

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