专利名称：Method for producing polycrystalline silicon发明人：Stefan Faerber,Andreas Bergmann,Reiner
Pech,Siegfried Riess
申请号：US15113332申请日：20150116公开号：US10077192B2公开日：20180918
摘要：Production of highly pure comminuted polycrystalline silicon from
polycrystalline silicon rods produced by the Siemens process is facilitated by removal ofgraphite residues from the electrode ends of the rods by removing the contaminatedend portions by means of mechanical impulses.
申请人：Wacker Chemie AG
地址：Munich DE
国籍：DE
代理机构：Brooks Kushman P.C.
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