HiPerFETTM Power MOSFETs IXFR 26N60QISOPLUS247TM Q-CLASS
(Electrically Isolated Back Surface)
N-Channel Enhancement ModeAvalance Rated, High dV/dt
Low Gate Charge and Capacitances
VDSS=600VID25=23ARDS(on)=250 mWtrr £ 250 ns
SymbolVDSSVDGRVGSVGSMID25IDMIAREAREASdv/dtPDTJTJMTstgTLVISOLWeight
Test Conditions
TJ= 25°C to 150°C
TJ= 25°C to 150°C; RGS = 1 MWContinuousTransientTC= 25°C
TC= 25°C, Note 1TC= 25°CTC= 25°CTC= 25°C
IS£ IDM, di/dt £ 100 A/ms, VDD £ VDSSTJ£ 150°C, RG = 2 WTC= 25°C
Maximum Ratings
600600±20±30239226451.55310
-55 ... +150
150
-55 ... +150
VVVVAAAmJJV/nsW°C°C°C°CV~g
ISOPLUS 247TM
E153432
G = GateS = Source* Patent pending
D = Drain
1.6 mm (0.063 in.) from case for 10 s50/60 Hz, RMS
t = 1 min
2502500
5
Features
•Silicon chip on Direct-Copper-Bondsubstrate
- High power dissipation- Isolated mounting surface- 2500V electrical isolation
•IXYS advanced low Qg process•Low gate charge and capacitances- easier to drive- faster switching
•Low drain to tab capacitance(<30pF)•Low RDS (on) HDMOSTM process
•Rugged polysilicon gate cell structure•Rated for Unclamped Inductive Load
SymbolTest Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min.typ.max.
6002.5
V4.5 V±100 nA
TJ = 25°CTJ = 125°C
25 mA1mA
250 mW
Switching (UIS)
•Fast intrinsic Rectifier
Applications
•DC-DC converters•Battery chargers
•Switched-mode and resonant-modepower supplies•DC choppers
•AC & DC motor controlAdvantages
•Easy assembly•Space savings•High power density
98727 (06/09/00)
VDSSVGS(th)IGSSIDSSRDS(on)
VGS = 0 V, ID = 250mA VDS = VGS, ID = 4mA VGS = ±20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = IT Notes 2, 3
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
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IXFR26N60QSymbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)min.typ.max.Notes 2, 314225100VGS = 0 V, VDS = 25 V, f = 1 MHz56021030VGS = 10 V, VDS = 0.5 • VDSS, ID = ITRG = 2.0 W (External), Notes 2, 3328015150VGS = 10 V, VDS = 0.5 • VDSS, ID = ITNotes 2, 334800.40.15200SpFpFpFnsnsnsnsnCnCnCK/WK/W Dim.1 Gate, 2 Drain (Collector)3 Source (Emitter)4 no connectionMillimeterMin.Max.A4.835.21A12.292.54A21.912.16b1.141.401.912.13b1b22.923.12C0.610.80D20.8021.34E15.7516.13e 5.45 BSCL19.8120.32L13.814.32Q5.596.20R4.324.83S13.2113.72T15.7516.26U1.653.03InchesMin.Max..190.205.090.100.075.085.045.055.075.084.115.123.024.031.819.840.620.635.215 BSC.780.800.150.170.220.244.170.190.520.540.620.640.065.080 ISOPLUS 247 (IXFR) OUTLINEgfsCissCossCrsstd(on)trtd(off)tfQg(on)QgsQgdRthJCRthCKVDS= 10 V; ID = ITSource-Drain DiodeSymbolISISMVSDtrrQRMIRMTest ConditionsVGS= 0 VRepetitive; Note 1IF = IT, VGS = 0 V, Notes 2, 3Characteristic Values(TJ = 25°C, unless otherwise specified)min.typ.max.261041.5250AAVnsmCAIF = 50A,-di/dt = 100 A/ms, VR = 100 V1.010Note:1. Pulse width limited by TJM
2. Pulse test, t £ 300 ms, duty cycle d £ 2 %3. IT = 13A
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:4,835,5924,881,1065,017,5085,049,9615,187,1175,486,7154,850,0724,931,8445,034,7965,063,3075,237,4815,381,025
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