专利名称：Single Wall Carbon Nanotubes By
Atmospheric Chemical Vapor Deposition
发明人：Amit Goyal,Iqbal Zafar申请号：US12029856申请日：20080212
公开号：US20120156124A1公开日：20120621
专利附图：
摘要：The present disclosure provides for systems and methods for producing carbonnanotubes. More particularly, the present disclosure provides for improved systems andmethods for producing single wall carbon nanotubes (SWNTs) by chemical vapor
deposition (CVD) using a carbon source in the presence of a catalyst. In exemplaryembodiments, the present disclosure provides for improved systems and methods forproducing single wall carbon nanotubes (SWNTs) by chemical vapor deposition (CVD)using carbon monoxide (CO) disproportionation in the presence of a catalyst compositionon a catalyst support material. In one embodiment, the present disclosure provides forsystems and methods for producing single wall carbon nanotubes (SWNTs) by chemicalvapor deposition (CVD) using carbon monoxide (CO) disproportionation with CO pressurefrom about 0.20 atm to about 1.0 atm in the presence of a cobalt/molybdenum catalystcomposition on a magnesium oxide catalyst support.
申请人：Amit Goyal,Iqbal Zafar
地址：Harrison NJ US,Morristown NJ US
国籍：US,US
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