STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DE

专利名称：STRUCTURE AND FORMATION METHOD OF

SEMICONDUCTOR DEVICE STRUCTUREWITH NANOWIRES

发明人：Chao-Ching CHENG,Wei-Sheng YUN,Shao-Ming YU,Tsung-Lin LEE,Chih-Chieh YEH

申请号：US15692124申请日：20170831

公开号：US20190067452A1公开日：20190228

专利附图：

摘要：Structures and formation methods of a semiconductor device structure are

provided. The method includes providing a substrate having a base portion and a finportion over the base portion. The fin portion has a channel region and a source/drainregion. The method also includes forming a stack structure over the fin portion. Thestack structure includes first and second semiconductor layers. The method also includesforming a source/drain portion in the stack structure at the source/drain region, andremoving a portion of the second semiconductor layer in the channel region in an etchingprocess. The remaining portion of the first semiconductor layer in the channel regionforms a nanowire. The method further includes forming a gate dielectric layersurrounding the nanowire, forming a high-k dielectric layer surrounding the gatedielectric layer, and forming a gate electrode surrounding the high-k dielectric layer.

申请人：Taiwan Semiconductor Manufacturing Co., Ltd.

地址：Hsinchu TW

国籍：TW

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