Method of forming a self-aligned contact utilizing

专利名称：Method of forming a self-aligned contact

utilizing a polysilicon layer

发明人：Gon Son,Heon C. Lee,Soo S. Yoon,Dong D.

Lee,Hae S. Park,Sea C. Kim

申请号：US07/8429申请日：19920227公开号：US052391A公开日：19931123

摘要：A method of forming a contact region having an insulating layer which is etchprotected, which includes sequentially depositing a gate oxide layer 2, a first conductinglayer 3 for gate electrode, a first insulating layer 4 and a second conducting layer 5 on asilicon substrate 1. A portion of the second conducting layer 5 is etched to form an etchprotective layer 5A. Portions of the etch protective layer 5A, the first insulating layer 4and the first conducting layer 3 are sequentially etched to form separated gateelectrodes 3a and 3b and separated etch protective layers 5a and 5b on the gateelectrodes 3a and 3b, respectively and to expose a portion of the gate oxide layer 2 todefine a source region 1A. A second insulating layer 6 is deposited on the entire surfaceof the resulting structure. The second insulating layer 6 is etched to form a spacer 6a oneach of the side walls of the gate electrodes 3a and 3b and on the first insulating layer 4and to expose the source region 1A. A third insulating layer 7 is deposited on the entiresurface of the resulting structure. A contact region 10 is formed by selectively removingthe third insulating layer 7 and the gate oxide layer 2 on the source region 1A andportions of the third insulating layer 7 on the etch protective layers 5a and 5b to form a

contact region having an etch protected insulating layer.

申请人：HYUNDAI ELECTRONICS INDUSTRIES CO., LTD.

代理机构：Merchant Gould Smith Edell Welter & Schmidt

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