Isolation Structure for MOS Transistor and Method

专利名称：Isolation Structure for MOS Transistor and

Method for Forming the Same

发明人：Buxin Zhang,Yuan Wang申请号：US11951072申请日：20071205

公开号：US20080230843A1公开日：20080925

专利附图：

摘要：A method for forming isolation structure for MOS transistor is disclosed, whichincludes forming a first photoresist layer over a sacrificed oxide layer of a semiconductorsubstrate, patterning the first photoresist layer to define a PMOS active region and a

PMOS isolation region; implanting nitrogen ions into the PMOS isolation region throughthe sacrificed oxide layer by using the first photoresist layer as a mask; removing the firstphotoresist layer; forming a second photoresist layer over the sacrificed oxide layer,patterning the second photoresist layer to define a NMOS active region and a NMOSisolation region; implanting oxygen ions into the NMOS isolation region through thesacrificed oxide layer by using the second photoresist layer as a mask; removing thesecond photoresist layer and the sacrificed oxide layer; and annealing the semiconductorsubstrate to form isolation structures of PMOS and NMOS, respectively.

申请人：Buxin Zhang,Yuan Wang

地址：Shanghai CN,Shanghai CN

国籍：CN,CN

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