Light emitting device and method for fabricating t

专利名称：Light emitting device and method for

fabricating the light emitting device

发明人：Dae Seob Han,Yong Tae Moon申请号：US13192985申请日：20110728公开号：US08212265B2公开日：20120703

专利附图：

摘要：Disclosed is a light emitting device including, a light emitting structure that has afirst conductive semiconductor layer, an active layer and a second conductive

semiconductor layer, wherein the active layer is provided between the first conductive

semiconductor layer and the second conductive semiconductor layer, and includes aplurality of well layers and at least one barrier layer, wherein the barrier layer includes afirst nitride layer and a second nitride layer provided on the first nitride layer, andwherein the first nitride layer has a larger energy band gap than the second nitride layerwhile the energy band gap of the second nitride layer is larger than that of each welllayer.

申请人：Dae Seob Han,Yong Tae Moon

地址：Seoul KR,Seoul KR

国籍：KR,KR

代理机构：Lowe Hauptman Ham & Berner, LLP

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