BFR740L3RH资料

BFR740L3RHNPN Silicon Germanium RF Transistor• High gain ultra low noise RF transistor• Provides outstanding performance for a wide range of wireless applications up to 10 GHz and more• Ideal for WLAN applications

• Outstanding noise figure F = 0.5 dB at 1.8 GHz Outstanding noise figure F = 0.8 dB at 6 GHz• High maximum stable and available gain

Gms = 24.5 dB at 1.8 GHz, Gma = 15 dB at 6 GHz• Gold metallization for extra high reliability• 150 GHz fT-Silicon Germanium technology• Extremly small and flat leadless package, height 0.32 mm max.

• Pb-free (RoHS compliant) package1)• Qualified according AEC Q101

123ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

BFR740L3RHMarkingR9

1=B

Pin Configuration

2=C3=EPackage

TSLP-3-9

1Pb-containing package may be available upon special request

12007-03-30

元器件交易网www.cecb2b.com

BFR740L3RHMaximum RatingsParameter

Collector-emitter voltage TA > 0°C TA ≤ 0°C

Collector-emitter voltageCollector-base voltageEmitter-base voltageCollector currentBase current

Total power dissipation1) TS ≤ 99°C

Junction temperatureAmbient temperatureStorage temperatureThermal ResistanceParameter

Junction - soldering point2)

SymbolRthJSValue≤ 320

UnitK/W

TjTATstg150-65 ... 150-65 ... 150

°C

VCESVCBOVEBOICIBPtotSymbolVCEO

Value 43.513131.2303160

mWmAUnitV

Electrical Characteristics at TA = 25°C, unless otherwise specifiedParameter

DC Characteristics

Collector-emitter breakdown voltage IC = 1 mA, IB = 0

Collector-emitter cutoff current VCE = 13 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0

Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain

IC = 25 mA, VCE = 3 V, pulse measured

1T

Symbol

min.

V(BR)CEOICESICBOIEBOhFE

4---160

Valuestyp.4.7---250

max.-301003400

Unit

VµAnAµA-

S is measured on the collector lead at the soldering point to the pcb2For calculation of R

thJA please refer to Application Note Thermal Resistance

22007-03-30

元器件交易网www.cecb2b.com

BFR740L3RHElectrical Characteristics at TA = 25°C, unless otherwise specified

SymbolValuesUnitParameter

min.typ.max.AC Characteristics (verified by random sampling)

Transition frequency fTIC = 25 mA, VCE = 3 V, f = 2 GHzCollector-base capacitance VCB = 3 V, f = 1 MHz, VBE = 0 , emitter grounded

Collector emitter capacitance VCE = 3 V, f = 1 MHz, VBE = 0 , base grounded

Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector groundedNoise figure

IC = 8 mA, VCE = 3 V, f = 1.8 GHz, ZS = ZSopt IC = 8 mA, VCE = 3 V, f = 6 GHz, ZS = ZSoptPower gain, maximum stable1) IC = 25 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz

Power gain, maximum available1) IC = 25 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt, f = 6 GHzTransducer gain

IC = 25 mA, VCE = 3 V, ZS = ZL = 50 Ω, f = 1.8 GHz f = 6 GHz

Third order intercept point at output2)

VCE = 3 V, IC = 25 mA, ZS=ZL=50 Ω, f = 1.8 GHz1dB Compression point at output

IC = 25 mA, VCE = 3 V, ZS=ZL=50 Ω, f = 1.8 GHz

1/2

ma = |S21e / S12e| (k-(k²-1)), Gms = |S21e / S12e|

2IP3 value depends on termination of all intermodulation frequency components.Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz

1G

--

420.09

-0.15

GHzpF

Ccb

Cce

-0.18-

Ceb

-0.38-

F --

0.50.824.5

---

dB

Gms

-dB

Gma

-15-dB

|S21e|2

--

2212.52511

----

dB

IP3P-1dB

--

dBm

32007-03-30

元器件交易网www.cecb2b.com

BFR740L3RHSPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):Transistor Chip Data:IS =VAF =NE = VAR =NC =RBM =CJE =TF =ITF =VJC =TR =MJS =XTI =AF =

3.84 e-134001.5861.281.51.690.220.002152900.550.0130.180.911

mAV-V-ΩpFnsmAVns---BF =IKF =BR =IKR =RB =RE =VJE =XTF =PTF =MJC =CJS =XTB =FC =KF =

1100512.16253.23900.5930.10.1520.0797-2.20.9590

-mA-mAΩmΩV-NF =ISE =NR =ISC =IRB =RC =MJE =VTF =CJC =XCJC =VJS =EG =TNOM

1.018

4.296 e-121

3.85 e-12106.880.071.320.09950.010.571.1125

-mA-mAAΩ-VpF-V°C

pF-

All parameters are ready to use, no scalling is necessary.

Package Equivalent Circuit:

Cbc_packLbb_packRbc_chipCcb_chipCbc_chipLcc_chipLcc_packRcs_chipRbb_packLbb_chipBTransistorModelRee_chipCSECcs_chipRcc_packCbe_packLee_packCce_packFor examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com

Lbb_chip =Lcc_chip =Lee_pack =Lbb_pack =Lcc_pack =Cbc_chip =Ccb_chip =Cbc_pack =Cbe_pack =Cce_pack =Ccs_chip =Rbc_chip =Ree_chip =Rbb_pack =Rcc_pack =Rcspack =

0.19350.18220.22660.100.0019450.0150.02690.001520.03140.22560.15672300.760.520.5720.116

nHnHnHnHnHpFpFpFpFpFpFΩΩΩΩΩ

Valid up to 6GHz

42007-03-30

元器件交易网www.cecb2b.com

Total power dissipation Ptot = ƒ(TS)

180160140120]W100m[ totP8060402000153045607590105120135150TS [°C]Permissible Pulse LoadPtotmax/PtotDC = ƒ(tp)

102→tp←D=tp /T←T→CDD = 0totP1D = 0.005/xa10D = 0.01mtoD = 0.02tPD = 0.05D = 0.1D = 0.2D = 0.510010−710−610−510−410−310−210−1100tp [s]BFR740L3RHPermissible Puls Load RthJS = ƒ (tp)

]D = 0.5W/D = 0.2K[ D = 0.1S102JhD = 0.05tRD = 0.02D = 0.01D = 0.005D = 0→tp←D=tp /T←T→10110−710−610−510−410−310−210−1100tp [s]Collector-base capacitance Ccb = ƒ (VCB)f = 1 MHz

0.20.180.160.140.12]Fp[ b0.1cC0.080.060.040.020024681012VCB [V]52007-03-30

元器件交易网www.cecb2b.com

Third order Intercept Point IP3 = ƒ (IC)(Output, ZS = ZL = 50 Ω )VCE = parameter, f = 1.8 GHz

3027 4.00V24 3.00V2118]mBd[15 3PI 2.00V1296 1.00V3005101520253035IC [mA]Power gain Gma, Gms = ƒ (f)VCE = 3 V, IC = 25 mA

403530Gms25]Bd[ G20|S|2Gma211510500123456f [GHz]BFR740L3RHTransition frequency fT = ƒ(IC)VCE = parameter, f = 2 GHz

50 2 V to 4V403530]zHG25[ Tf2015 1.00V105 0.75V 0.50V005101520253035IC [mA]Power gain Gma, Gms = ƒ (IC)VCE = 3 Vf = parameter

343230 0.90GHz282624 1.80GHz]Bd 2.40GHz[22 G20 3.00GHz18 4.00GHz16 5.00GHz 6.00GHz14121005101520253035IC [mA]62007-03-30

元器件交易网www.cecb2b.com

Power gain Gma, Gms = ƒ (VCE)IC = 25 mAf = parameter

363228 0.90GHz24 1.80GHz 2.40GHz20 3.00GHz]Bd 4.00GHz[ G16 5.00GHz 6.00GHz1284000.511.522.533.4.55VCE [V]Noise figure F = ƒ(IC)VCE = 3V, f = 1.8 GHz

21.81.61.41.2ZS = 50Ω]Bd[ 1ZS = ZSoptF0.80.60.40.20051015202530Ic [mA]BFR740L3RHNoise figure F = ƒ(IC)VCE = 3 V, f = parameterZS = ZSopt21.81.6f = 6GHz1.4f = 5GHzf = 4GHzf = 2.4GHz1.2f = 1.8GHzf = 0.9GHz]Bd[ 1F0.80.60.40.20051015202530Ic [mA]Noise figure F = ƒ(f)VCE = 3V, ZS = ZSopt

1.210.8]Bd[ F0.60.4IC = 25mAIC = 8.0mA0.2001234567f [GHz]72007-03-30

元器件交易网www.cecb2b.com

Source impedance for min.noise figure vs. frequencyVCE = 3 V, IC = 8 mA / 25 mA

11.50.520.4I0.3c = 8.0mA340.250.15GHz3GHz6GHz2.4GHz101.8GHz00.10.20.30.40.514GHz1.520.9GHz345−0.1−10−0.2−5I−4−0.3c = 25mA−3−0.4−0.5−2−1.5−18BFR740L3RH2007-03-30

元器件交易网www.cecb2b.com

Package TSLP-3-9BFR740L3RHPackage OutlineTop view0.31+0.01-0.02Bottom view0.6±0.050.5±0.0351)0.575±0.05320.4±0.0351)1312Pin 1marking0.35±0.052x0.15±0.0351)1) Dimension applies to plated terminalFoot PrintFor board assembly information please refer to Infineon website \"Packages\"0.60.450.20.38R0.190.950.50.2550.350.2250.15Copper0.225Solder mask0.20.20.17R0.1Stencil aperturesMarking Layout (Example)BFR705L3RH Type codePin 1 markingLaser markingStandard PackingReel ø180 mm = 15.000 Pieces/Reel41.20.35Pin 1marking0.880.31512x0.25±0.0351)1±0.0592007-03-30

元器件交易网www.cecb2b.com

BFR740L3RHEdition 2006-02-01Published by

Infineon Technologies AG81726 München, Germany

© Infineon Technologies AG 2007.All Rights Reserved.

Attention please!

The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any

examples or hints given herein, any typical values stated herein and/or any informationregarding the application of the device, Infineon Technologies hereby disclaims anyand all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements components may contain dangerous substances.For information on the types in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices orsystems with the express written approval of Infineon Technologies, if a failure ofsuch components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system.

Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,it is reasonable to assume that the health of the user or other persons may be endangered.

102007-03-30