专利名称：Processes and structures for epitaxial
growth on laminate substrates
发明人：Thomas Pinnington,Sean Olson,James M.
Zahler,Charles Tsai
申请号：US11785038申请日：20070413
公开号：US20070243703A1公开日：20071018
专利附图：
摘要：A method of making a semiconductor device includes providing a laminatesubstrate made by bonding a II-VI or III-V semiconductor laminate film to a support
substrate, and preparing the laminate film to enable growth of a II-VI or III-Vsemiconductor device layer on the laminate substrate.
申请人：Thomas Pinnington,Sean Olson,James M. Zahler,Charles Tsai
地址：Pasadena CA US,Santa Monica CA US,Pasadena CA US,Arcadia CA US
国籍：US,US,US,US
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