Infineon-SIGC81T120R2CS_L7161T-DS-v02_00-en

IGBT Chip in NPT-technology

FEATURES:

• 1200V NPT technology 175µm chip • low turn-off losses • short tail current

• positive temperature coefficient • easy paralleling

• integrated gate resistor

SIGC81T120R2CS

This chip is used for: • IGBT Modules

Applications:

• drives, SMPS, resonant

applications

CGE

Chip Type

VCE ICn Die Size

9.08 X 8.98 mm2

Package sawn on foil

Ordering Code Q67050-A4050-A001

SIGC81T120R2CS 1200V 50A

MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position

Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond

Reject Ink Dot Size

Recommended Storage Environment

9.08 X 8.98 8 x (2.6 x 1.78) 1.46 x 0.8 81.5 / 63.5

180 150 90 167 pcs Photoimide 3200 nm Al Si 1%

mm

2µm mm grd

1400 nm Ni Ag –system

suitable for epoxy and soft solder die bonding

electrically conductive glue or solder

Al, <500µm ∅ 0.65mm ; max 1.2mm

store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C

Edited by INFINEON Technologies AI PS DD HV3, L 7161-T, Edition 2, 03.09.2003

MAXIMUM RATINGS: Parameter

Collector-emitter voltage, Tj=25 °C DC collector current, limited by Tjmax Pulsed collector current, tp limited by Tjmax Gate emitter voltage

Operating junction and storage temperature

1 )

SIGC81T120R2CS

Symbol VCE IC Icpuls VGE Tj, Tstg

Value 1200

1 )

Unit V A A V °C

150 ±20 -55 ... +150

depending on thermal properties of assembly STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specified: Parameter

Collector-emitter breakdown voltage Collector-emitter saturation voltage Gate-emitter threshold voltage Zero gate voltage collector current Gate-emitter leakage current Integrated gate resistor

Symbol V(BR)CES VCE(sat) VGE(th) ICES IGES RGint

Conditions VGE=0V , IC=3mA VGE=15V, IC=50A IC=2mA , VGE=VCE VCE=1200V , VGE=0V VCE=0V , VGE=20V

Value

min. 1200 2.7 4.5

typ. 3.2 5.5 5

max. 3.7 6.5 6 300 7

µA nA Ω V Unit

ELECTRICAL CHARACTERISTICS (tested at component): Parameter Input capacitance Output capacitance

Reverse transfer capacitance

Symbol Ciss Coss Crss

Conditions VCE=25V, VGE=0V, f=1MHz

Value

min. - - -

typ. 3.3 0.5 0.22

max.

Unit nF

SWITCHING CHARACTERISTICS (tested at component), Inductive Load Parameter Turn-on delay time Rise time

Turn-off delay time Fall time

1)

Symbol td(on) tr td(off) tf

Conditions 1) Tj=125°C VCC=600V, IC=50A, VGE=-15/15V, RG= 15Ω

Value

min. - - - -

typ. 60 50 400 60

max.

Unit ns

values also influenced by parasitic L- and C- in measurement and package.

Edited by INFINEON Technologies AI PS DD HV3, L 7161-T, Edition 2, 03.09.2003

CHIP DRAWING:

SIGC81T120R2CS

Edited by INFINEON Technologies AI PS DD HV3, L 7161-T, Edition 2, 03.09.2003

FURTHER ELECTRICAL CHARACTERISTICS:

SIGC81T120R2CS

This chip data sheet refers to the device data sheet

DESCRIPTION:

AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld

Eupec

FP50R12KS4C

Published by

Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-811 München

© Infineon Technologies AG 2002 All Rights Reserved.

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Edited by INFINEON Technologies AI PS DD HV3, L 7161-T, Edition 2, 03.09.2003