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Infineon-SIGC81T120R2CS_L7161T-DS-v02_00-en

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IGBT Chip in NPT-technology

FEATURES:

• 1200V NPT technology 175µm chip • low turn-off losses • short tail current

• positive temperature coefficient • easy paralleling

• integrated gate resistor

SIGC81T120R2CS

This chip is used for: • IGBT Modules

Applications:

• drives, SMPS, resonant

applications

CGE

Chip Type

VCE ICn Die Size

9.08 X 8.98 mm2

Package sawn on foil

Ordering Code Q67050-A4050-A001

SIGC81T120R2CS 1200V 50A

MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position

Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond

Reject Ink Dot Size

Recommended Storage Environment

9.08 X 8.98 8 x (2.6 x 1.78) 1.46 x 0.8 81.5 / 63.5

180 150 90 167 pcs Photoimide 3200 nm Al Si 1%

mm

2µm mm grd

1400 nm Ni Ag –system

suitable for epoxy and soft solder die bonding

electrically conductive glue or solder

Al, <500µm ∅ 0.65mm ; max 1.2mm

store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C

Edited by INFINEON Technologies AI PS DD HV3, L 7161-T, Edition 2, 03.09.2003

MAXIMUM RATINGS: Parameter

Collector-emitter voltage, Tj=25 °C DC collector current, limited by Tjmax Pulsed collector current, tp limited by Tjmax Gate emitter voltage

Operating junction and storage temperature

1 )

SIGC81T120R2CS

Symbol VCE IC Icpuls VGE Tj, Tstg

Value 1200

1 )

Unit V A A V °C

150 ±20 -55 ... +150

depending on thermal properties of assembly STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specified: Parameter

Collector-emitter breakdown voltage Collector-emitter saturation voltage Gate-emitter threshold voltage Zero gate voltage collector current Gate-emitter leakage current Integrated gate resistor

Symbol V(BR)CES VCE(sat) VGE(th) ICES IGES RGint

Conditions VGE=0V , IC=3mA VGE=15V, IC=50A IC=2mA , VGE=VCE VCE=1200V , VGE=0V VCE=0V , VGE=20V

Value

min. 1200 2.7 4.5

typ. 3.2 5.5 5

max. 3.7 6.5 6 300 7

µA nA Ω V Unit

ELECTRICAL CHARACTERISTICS (tested at component): Parameter Input capacitance Output capacitance

Reverse transfer capacitance

Symbol Ciss Coss Crss

Conditions VCE=25V, VGE=0V, f=1MHz

Value

min. - - -

typ. 3.3 0.5 0.22

max.

Unit nF

SWITCHING CHARACTERISTICS (tested at component), Inductive Load Parameter Turn-on delay time Rise time

Turn-off delay time Fall time

1)

Symbol td(on) tr td(off) tf

Conditions 1) Tj=125°C VCC=600V, IC=50A, VGE=-15/15V, RG= 15Ω

Value

min. - - - -

typ. 60 50 400 60

max.

Unit ns

values also influenced by parasitic L- and C- in measurement and package.

Edited by INFINEON Technologies AI PS DD HV3, L 7161-T, Edition 2, 03.09.2003

CHIP DRAWING:

SIGC81T120R2CS

Edited by INFINEON Technologies AI PS DD HV3, L 7161-T, Edition 2, 03.09.2003

FURTHER ELECTRICAL CHARACTERISTICS:

SIGC81T120R2CS

This chip data sheet refers to the device data sheet

DESCRIPTION:

AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld

Eupec

FP50R12KS4C

Published by

Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-811 München

© Infineon Technologies AG 2002 All Rights Reserved.

Attention please!

The information herein is given to describe certain components and shall not be considered as warranted characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives world-wide (see address list). Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office.

Infineon Technologies components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Edited by INFINEON Technologies AI PS DD HV3, L 7161-T, Edition 2, 03.09.2003

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