IGBT Chip in NPT-technology
FEATURES:
• 1200V NPT technology 175µm chip • low turn-off losses • short tail current
• positive temperature coefficient • easy paralleling
• integrated gate resistor
SIGC81T120R2CS
This chip is used for: • IGBT Modules
Applications:
• drives, SMPS, resonant
applications
CGE
Chip Type
VCE ICn Die Size
9.08 X 8.98 mm2
Package sawn on foil
Ordering Code Q67050-A4050-A001
SIGC81T120R2CS 1200V 50A
MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position
Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond
Reject Ink Dot Size
Recommended Storage Environment
9.08 X 8.98 8 x (2.6 x 1.78) 1.46 x 0.8 81.5 / 63.5
180 150 90 167 pcs Photoimide 3200 nm Al Si 1%
mm
2µm mm grd
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al, <500µm ∅ 0.65mm ; max 1.2mm
store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies AI PS DD HV3, L 7161-T, Edition 2, 03.09.2003
MAXIMUM RATINGS: Parameter
Collector-emitter voltage, Tj=25 °C DC collector current, limited by Tjmax Pulsed collector current, tp limited by Tjmax Gate emitter voltage
Operating junction and storage temperature
1 )
SIGC81T120R2CS
Symbol VCE IC Icpuls VGE Tj, Tstg
Value 1200
1 )
Unit V A A V °C
150 ±20 -55 ... +150
depending on thermal properties of assembly STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specified: Parameter
Collector-emitter breakdown voltage Collector-emitter saturation voltage Gate-emitter threshold voltage Zero gate voltage collector current Gate-emitter leakage current Integrated gate resistor
Symbol V(BR)CES VCE(sat) VGE(th) ICES IGES RGint
Conditions VGE=0V , IC=3mA VGE=15V, IC=50A IC=2mA , VGE=VCE VCE=1200V , VGE=0V VCE=0V , VGE=20V
Value
min. 1200 2.7 4.5
typ. 3.2 5.5 5
max. 3.7 6.5 6 300 7
µA nA Ω V Unit
ELECTRICAL CHARACTERISTICS (tested at component): Parameter Input capacitance Output capacitance
Reverse transfer capacitance
Symbol Ciss Coss Crss
Conditions VCE=25V, VGE=0V, f=1MHz
Value
min. - - -
typ. 3.3 0.5 0.22
max.
Unit nF
SWITCHING CHARACTERISTICS (tested at component), Inductive Load Parameter Turn-on delay time Rise time
Turn-off delay time Fall time
1)
Symbol td(on) tr td(off) tf
Conditions 1) Tj=125°C VCC=600V, IC=50A, VGE=-15/15V, RG= 15Ω
Value
min. - - - -
typ. 60 50 400 60
max.
Unit ns
values also influenced by parasitic L- and C- in measurement and package.
Edited by INFINEON Technologies AI PS DD HV3, L 7161-T, Edition 2, 03.09.2003
CHIP DRAWING:
SIGC81T120R2CS
Edited by INFINEON Technologies AI PS DD HV3, L 7161-T, Edition 2, 03.09.2003
FURTHER ELECTRICAL CHARACTERISTICS:
SIGC81T120R2CS
This chip data sheet refers to the device data sheet
DESCRIPTION:
AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld
Eupec
FP50R12KS4C
Published by
Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-811 München
© Infineon Technologies AG 2002 All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information
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Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Edited by INFINEON Technologies AI PS DD HV3, L 7161-T, Edition 2, 03.09.2003
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