专利名称：Method for detecting and examining slightly
irregular surface states, scanning probemicroscope therefor, and method forfabricating a semiconductor device or aliquid crystal display device using these
发明人：Yoshitsugu Nakagawa,Fusami Soeda,Naohiko
Fujino,Isamu Karino,Osamu Wada,HiroshiKurokawa,Koichiro Hori,NobuyoshiHattori,Masahiro Sekine,MasashiOhmori,Kazuo Kuramoto,Junji Kobayashi
申请号：US08/254771申请日：19940606公开号：US05517027A公开日：19960514
摘要：Method for detecting and examining a slightly irregular surface state isprovided which includes the steps of: illuminating a surface of a sample with light beamfor detecting the slightly irregular surface state; observing a variation of the light beamoccurring due to the slightly irregular surface state to specify the location of the slightlyirregular surface state in an x-y plane of the sample; making the location of a probeneedle of a scanning probe microscope and the location of the slightly irregular surfacestate on the sample coincide with each other; and measuring a three-dimensional imageof the slightly irregular surface state by means of the scanning probe microscope. Thescanning probe microscope for use in the aforementioned method and a method for
fabricating a semiconductor device or a liquid crystal display device which utilizes theaforementioned method are also provided.
申请人：MITSUBISHI DENKI KABUSHIKI KAISHA
代理机构：Burns, Doane, Swecker & Mathis
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