NPN Silicon
Features
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS•
Compliant
S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC−Q101 Qualified andPPAP Capable
www.onsemi.comCOLLECTOR
31BASE
MAXIMUM RATINGS
Rating
Collector−Emitter VoltageCollector−Base VoltageEmitter−Base VoltageCollector Current − ContinuousCollector Current − Peak (Note 3)
SymbolVCEOVCBOVEBOICICM
Value40606.0200900
UnitVdcVdcVdcmAdcmAdc
12EMITTER
3SOT−23 (TO−236)
CASE 318STYLE 6
2THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board (Note 1) @TA = 25°CDerate above 25°CThermal Resistance, Junction−to−AmbientTotal Device Dissipation Alumina Substrate, (Note 2)@TA = 25°C
Derate above 25°CThermal Resistance, Junction−to−AmbientJunction and Storage Temperature
SymbolPD
Max2251.8556
UnitmWmW/°C°C/W
MARKING DIAGRAM
1AMMG
G1
RqJAPD
3002.4
RqJATJ, Tstg
417−55 to +150
mWmW/°C°C/W°C
Stresses exceeding those listed in the Maximum Ratings table may damage thedevice. If any of these limits are exceeded, device functionality should not beassumed, damage may occur and reliability may be affected.1.FR−5 = 1.0 0.75 0.062 in.
2.Alumina = 0.4 0.3 0.024 in. 99.5% alumina.3.Reference SOA curve.
1AM= Specific Device CodeM= Date Code*G= Pb−Free Package
(Note: Microdot may be in either location)*Date Code orientation and/or overbar mayvary depending upon manufacturing location.
ORDERING INFORMATION
DeviceMMBT3904LT1GSMMBT3904LT1GMMBT3904LT3GSMMBT3904LT3G
PackageSOT−23(Pb−Free)SOT−23(Pb−Free)
Shipping†3000 / Tape &
Reel10,000 / Tape &
Reel
†For information on tape and reel specifications,including part orientation and tape sizes, pleaserefer to our Tape and Reel Packaging SpecificationsBrochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 19941
October, 2016 − Rev. 13
Publication Order Number:
MMBT3904LT1/D
MMBT3904L, SMMBT3904L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0)Collector−Base Breakdown Voltage (IC = 10 mAdc, IE = 0)Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0)Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc)Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc)ON CHARACTERISTICS (Note 4)DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)(IC = 1.0 mAdc, VCE = 1.0 Vdc)(IC = 10 mAdc, VCE = 1.0 Vdc)(IC = 50 mAdc, VCE = 1.0 Vdc)(IC = 100 mAdc, VCE = 1.0 Vdc)Collector−Emitter Saturation Voltage(IC = 10 mAdc, IB = 1.0 mAdc)(IC = 50 mAdc, IB = 5.0 mAdc)Base−Emitter Saturation Voltage(IC = 10 mAdc, IB = 1.0 mAdc)(IC = 50 mAdc, IB = 5.0 mAdc)SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)Small−Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k ohms, f = 1.0 kHz)SWITCHING CHARACTERISTICSDelay TimeRise TimeStorage TimeFall Time
(VCC = 3.0 Vdc, VBE = −0.5 Vdc,IC = 10 mAdc, IB1 = 1.0 mAdc)(VCC = 3.0 Vdc,
IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc)
tdtrtstf
−−−−
353520050
ns
fTCoboCibohiehrehfehoeNF
300−−1.00.51001.0−
−4.08.0108.0400405.0
MHzpFpFkWX 10−4
−mmhosdB
HFE
−
40701006030−−0.65−
−−300−−
Vdc
0.20.3
Vdc
0.850.95
V(BR)CEOV(BR)CBOV(BR)EBO
IBLICEX
40606.0−−
−−−5050
VdcVdcVdcnAdcnAdc
Symbol
Min
Max
Unit
VCE(sat)
VBE(sat)
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Productperformance may not be indicated by the Electrical Characteristics if operated under different conditions.4.Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
DUTY CYCLE = 2%300 ns+3 V+10.9 V10 k27510 < t1 < 500 msDUTY CYCLE = 2%t1+3 V+10.9 V27510 k1N916CS < 4 pF*- 0.5 V< 1 ns0
CS < 4 pF*- 9.1 V′ * Total shunt capacitance of test jig and connectors
< 1 nsFigure 1. Delay and Rise Time
Equivalent Test CircuitFigure 2. Storage and Fall Time
Equivalent Test Circuit
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MMBT3904L, SMMBT3904L
TYPICAL TRANSIENT CHARACTERISTICS
TJ = 25°CTJ = 125°C
107.0CAPACITANCE (pF)Q, CHARGE (pC)5.0
Cibo3.02.0
Cobo50003000200010007005003002001007050
QTQAVCC = 40 VIC/IB = 101.00.10.20.30.50.71.02.03.05.07.0102030401.02.03.05.07.01020305070100200
REVERSE BIAS VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
Figure 3. Capacitance
500300200100705030201075
td @ VOB = 0 V1.0
2.03.0
5.07.010
20
30
IC, COLLECTOR CURRENT (mA)
40 V15 V2.0 V5070100
200
IC/IB = 10500300200t r , RISE TIME (ns)100
705030201075
Figure 4. Charge Data
VCC = 40 VIC/IB = 10TIME (ns)tr @ VCC = 3.0 V1.02.03.05.07.01020305070100200
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn−On Time
500300200t s′ , STORAGE TIME (ns)100
705030201075
IC/IB = 20IC/IB = 10IC/IB = 20IC/IB = 10500300200
Figure 6. Rise Time
t′s = ts - 1/8 tfIB1 = IB2t f , FALL TIME (ns)VCC = 40 VIB1 = IB2IC/IB = 20100705030201075
IC/IB = 101.02.03.05.07.010203050701002001.02.03.05.07.01020305070100200IC, COLLECTOR CURRENT (mA)IC, COLLECTOR CURRENT (mA)
Figure 7. Storage TimeFigure 8. Fall Time
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MMBT3904L, SMMBT3904L
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
1210NF, NOISE FIGURE (dB)864200.1SOURCE RESISTANCE = 500 WIC = 100 mA0.20.41.02.04.0102040100SOURCE RESISTANCE = 200 WIC = 1.0 mANF, NOISE FIGURE (dB)SOURCE RESISTANCE = 200 WIC = 0.5 mASOURCE RESISTANCE = 1.0 kIC = 50 mA14
f = 1.0 kHz1210864200.10.20.41.02.04.0102040100IC = 100 mAIC = 1.0 mAIC = 0.5 mAIC = 50 mAf, FREQUENCY (kHz)
RS, SOURCE RESISTANCE (k OHMS)
Figure 9. Figure 10.
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)
300
ho e , OUTPUT ADMITTANCE ( m mhos)5.0
10
1005020105210.1
0.2
0.30.51.02.03.0
IC, COLLECTOR CURRENT (mA)
5.0
10
h f e , CURRENT GAIN200
1007050
30
0.10.2
0.30.51.02.03.0
IC, COLLECTOR CURRENT (mA)
Figure 11. Current Gain
20h i e , INPUT IMPEDANCE (k OHMS)105.0
107.05.03.02.0
Figure 12. Output Admittance
2.01.00.50.2
h r e , VOLTAGE FEEDBACK RATIO (X 10 - 4 )5.0
10
1.00.70.50.1
0.2
0.30.51.02.03.0
IC, COLLECTOR CURRENT (mA)
5.0
10
0.10.2
0.30.51.02.03.0IC, COLLECTOR CURRENT (mA)
Figure 13. Input Impedance
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Figure 14. Voltage Feedback Ratio
MMBT3904L, SMMBT3904L
TYPICAL STATIC CHARACTERISTICS
1000TJ = +150°Ch F E , DC CURRENT GAIN+25°C- 55°CVCE = 1.0 V1001010.11.010IC, COLLECTOR CURRENT (mA)
1001000Figure 15. DC Current Gain
V E , COLLECTOR EMITTER VOLTAGE (VOLTS)C1.0
TJ = 25°C0.8
IC = 1.0 mA10 mA30 mA100 mA0.60.4
0.20
0.01
0.020.030.050.070.10.20.30.50.71.02.03.05.07.010
IB, BASE CURRENT (mA)
Figure 16. Collector Saturation Region
www.onsemi.com5
MMBT3904L, SMMBT3904L
0.8VCE(sat), COLLECTOR−EMITTERSATURATION VOLTAGE (V)150°C25°C−55°CVBE(sat), BASE−EMITTERSATURATION VOLTAGE (V)0.70.60.50.40.30.20.100.0010.010.11IC, COLLECTOR CURRENT (A)IC/IB = 101.4IC/IB = 101.21.00.80.60.40.20.00010.0010.010.11IC, COLLECTOR CURRENT (A)
150°C−55°C25°CFigure 17. Collector Emitter Saturation Voltage
vs. Collector Current
VBE(on), BASE−EMITTER VOLTAGE (V)1.41.21.00.80.60.4150°C0.20.00010.0010.010.11IC, COLLECTOR CURRENT (A)
−55°C25°CVCE = 1 VCOEFFICIENT (mV/ ° C)1.00.5
Figure 18. Base Emitter Saturation Voltage vs.
Collector Current
+25°C TO +125°CqVC FOR VCE(sat)- 55°C TO +25°C0- 0.5
- 55°C TO +25°C- 1.0
+25°C TO +125°C- 1.5- 2.0
qVB FOR VBE(sat)020406080100120140160180200
IC, COLLECTOR CURRENT (mA)
Figure 19. Base Emitter Voltage vs. Collector
Current
1000fT, CURRENT−GAIN−BANDWIDTHPRODUCT (MHz)VCE = 1 VTA = 25°C0.1100IC (A)1Figure 20. Temperature Coefficients
1 s100 msThermal Limit1 ms10 ms0.01100.11101001000IC, COLLECTOR CURRENT (mA)
0.001Single Pulse Test@ TA = 25°C0.010.11VCE (Vdc)
10100Figure 21. Current Gain Bandwidth vs.
Collector Current
Figure 22. Safe Operating Area
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MMBT3904L, SMMBT3904L
PACKAGE DIMENSIONS
SOT−23 (TO−236)CASE 318−08ISSUE AR
D0.253E12HEL3XbTNOTES:
1.DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.2.CONTROLLING DIMENSION: MILLIMETERS.
3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OFTHE BASE MATERIAL.
4.DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS.
DIMAA1bcDEeLL1HET
MIN0.890.010.370.082.801.201.780.300.352.100°
MILLIMETERS
NOMMAX1.001.110.060.100.440.500.140.202.903.041.301.401.902.040.430.550.540.692.402.64−−−10°
MIN
0.0350.0000.0150.0030.1100.0470.0700.0120.0140.0830°
INCHESNOM0.0390.0020.0170.0060.1140.0510.0750.0170.0210.094−−−
MAX0.0440.0040.0200.0080.1200.0550.0800.0220.0270.10410°
eTOP VIEW
L1VIEW CAA1SIDE VIEWSEE VIEW Cc
END VIEW
STYLE 6:
PIN 1.BASE
2.EMITTER3.COLLECTOR
RECOMMENDED
SOLDERING FOOTPRINT*
2.900.903X
3X
0.800.95PITCHDIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and solderingdetails, please download the ON Semiconductor Soldering andMounting Techniques Reference Manual, SOLDERRM/D.
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