SEMICONDUCTOR APPARATUS, DISPLAY PANEL, AND METHOD

专利名称：SEMICONDUCTOR APPARATUS, DISPLAY

PANEL, AND METHOD OF

MANUFACTURING SEMICONDUCTORAPPARATUS

发明人：Yudai TAKANISHI,Yukinobu NAKATA申请号：US14423490申请日：20130823

公开号：US20150316802A1公开日：20151105

专利附图：

摘要：The present invention prevents electric corrosion even when metal lines that

may cause problems when in direct contact with ITO are used as source/drain lines,without increasing the number of steps for manufacturing a TFT substrate. A

semiconductor apparatus includes TFTs that each include: a gate electrode included in agate layer provided on a substrate ; a semiconductor element provided above the gatelayer with a gate insulating film positioned in between; and a source electrode and a drainelectrode included in a source layer located across the semiconductor element . Thesemiconductor apparatus includes, for a given TFT, a contact hole H formed in aninterlayer insulating film and planarizing film stacked on the source layer , and auxiliaryline layer portions P and S made of a metal that can prevent electric corrosion betweenitself and ITO and located to overlap the associated source line, where a pixel electrodeis connected with the associated drain electrode D via the auxiliary line layer portion P. Acommon electrode is provided to cover the auxiliary line layer portions S, and a potentialis supplied to the common electrode via the auxiliary line layer portions S.

申请人：Sharp Kabushiki Kaisha

地址：Osaka-shi, Osaka JP

国籍：JP

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