PLASMA PROCESSING EQUIPMENT

专利名称：PLASMA PROCESSING EQUIPMENT发明人：OHMI, TADAHIRO,HIRAYAMA,

MASAKI,GOTO, TETSUYA

申请号：EP03741183申请日：20030703公开号：EP1521297A4公开日：20060607

摘要：A plasma processing apparatus comprises a processing vessel defined by anouter wall and provided with a stage that holds a substrate to be processed thereon, anevacuation system coupled to the processing vessel, a microwave window provided onthe processing vessel as a part of the outer wall so as to face the substrate to beprocessed on the stage, a plasma gas supplying part supplying a plasma gas to theprocessing vessel, and a microwave antenna provided on the processing vessel incorrespondence to the microwave. The plasma gas supplying part includes a porousmedium and the plasma gas supplying part supplies the plasma gas through the porousmedium.

申请人：OHMI, TADAHIRO,TOKYO ELECTRON LIMITED

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