SI4834CDY-T1-E3;SI4834CDY-T1-GE3;中文规格书,Datasheet资料

Vishay Siliconix

Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

PRODUCT SUMMARY

VDS (V)

Channel-1Channel-2

3030

RDS(on) (Ω)0.020 at VGS = 10 V 0.025 at VGS = 4.5 V 0.020 at VGS = 10 V 0.025 at VGS = 4.5 V

ID (A)a, eQg (Typ.)8.08.08.08.0

7.37.3

FEATURES

•Halogen-free According to IEC 61249-2-21

Definition

•TrenchFET® Power MOSFET •100 % Rg Tested •100 % UIS Tested

•Compliant to RoHS Directive 2002/95/EC

SCHOTTKY PRODUCT SUMMARY

VDS (V)30

VSD (V)

Diode Forward Voltage

0.51 V at 1.0 A

IF (A)a2.0

APPLICATIONS

•Notebook Logic dc-to-dc •Low Current dc-to-dcD1D2SO-8S1G1S2G21234Top ViewOrdering Information: Si4834CDY-T1-E3 (Lead (Pb)-free) Si4834CDY-T1-GE3 (Lead (Pb)-free and Halogen-free)8765D1D1D2D2S1N-Channel MOSFETS2N-Channel MOSFETG1SchottkyDiodeG2ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Channel-1Channel-2Unit VDSDrain-Source Voltage 3030

V

VGSGate-Source Voltage ± 20± 20

TC = 25 °C8.0e8.0eTC = 70 °C7.17.1

Continuous Drain Current (TJ = 150 °C)ID

b, cTA = 25 °C7.5b, c7.5

TA = 70 °C5.8b, c5.8b, c

IDMPulsed Drain Current (10 µs Pulse Width)A3030

TC = 25 °C2.62.6

ISSource-Drain Current Diode Current

b, cTA = 25 °C1.8b, c1.8

ISM3030Pulsed Source-Drain Current

IAS1010Single Pulse Avalanche Current

L = 0.1 mH

EASmJ55Single Pulse Avalanche Energy

TC = 25 °C2.92.9TC = 70 °C1.81.8

PDWMaximum Power Dissipation

TA = 25 °C2b, c2b, cTA = 70 °C1.2b, c1.2b, c

TJ, TstgOperating Junction and Storage Temperature Range - 55 to 150°C

THERMAL RESISTANCE RATINGS

Channel-1Channel-2

Typ.Max.Typ.Max.Parameter Symbol Unit

RthJAt ≤ 10 s5262.55262.5Maximum Junction-to-Ambientb, d

°C/W

RthJFMaximum Junction-to-Foot (Drain)Steady State3333Notes:

a. Based on TC = 25 °C.

b. Surface Mounted on 1\" x 1\" FR4 board.c. t = 10 s.

d. Maximum under Steady State conditions is 110 °C/W (Channel-1) and 110 °C/W (Channel-2).e. Package limited.

Document Number: 68790S09-2109-Rev. B, 12-Oct-09

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Si4834CDY

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SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Typ.Parameter Symbol Test Conditions Min. Max.Unit Static

Drain-Source Breakdown VoltageVDS Temperature CoefficientVGS(th) Temperature CoefficientGate Threshold VoltageGate-Body Leakage

VDSΔVDS/TJΔVGS(th)/TJVGS(th) IGSS

VGS = 0 V, ID = 1 mA VGS = 0 V, ID = 1 mA

ID = 250 µA ID = 250 µA VDS = VGS, ID = 1 mA VDS = VGS, ID = 1 mA VDS = 0 V, VGS = ± 20 V VDS = 0 V, VGS = ± 20 V VDS = 30 V, VGS = 0 V

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 100 °C VDS = 30 V, VGS = 0 V, TJ = 100 °C

On-State Drain Currentb

ID(on)

VDS = 5 V, VGS = 10 V VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 8 A

Drain-Source On-State Resistanceb

RDS(on)

VGS = 10 V, ID = 8 A VGS = 4.5 V, ID = 5 A VGS = 4.5 V, ID = 5 A

Forward TransconductancebDynamica

Input CapacitanceOutput Capacitance

Reverse Transfer Capacitance

CissCossCrss

Channel-2

VDS = 15 V, VGS = 0 V, f = 1 MHzVDS = 15 V, VGS = 10 V, ID = 8 A

Total Gate Charge

Qg

VDS = 15 V, VGS = 10 V, ID = 8 A Channel-1

VDS = 15 V, VGS = 4.5 V, ID = 8 A

Gate-Source ChargeGate-Drain ChargeGate Resistance

Qgs Qgd Rg

Channel-2

VDS = 15 V, VGS = 4.5 V, ID = 8 A

f = 1 MHz

Ch-1

Channel-1

VDS = 15 V, VGS = 0 V, f = 1 MHz

Ch-2Ch-1Ch-2Ch-1Ch-2Ch-1Ch-2Ch-1Ch-2Ch-1Ch-2Ch-1Ch-2Ch-1Ch-2

0.20.2

950950185155656516.516.57.37.32.72.72.12.11.21.2

2.42.4

Ω

25251111

nCpF

gfs

VDS = 15 V, ID = 8 A VDS = 15 V, ID = 8 A

Ch-1Ch-2Ch-2Ch-2Ch-1Ch-2Ch-1Ch-2Ch-1Ch-2Ch-1Ch-2Ch-1Ch-2Ch-1Ch-2Ch-1Ch-2Ch-1Ch-2

2020

0.01560.01560.0190.0192929

0.0200.0200.0250.025

SΩ

1.10.016113030

32- 6

331001000.100.001100.025

AmAVmV/°CVnA

a

Notes:

a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

www.vishay.com2Document Number: 68790S09-2109-Rev. B, 12-Oct-09

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Si4834CDY

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SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Typ.aMax.Parameter Symbol Test Conditions Min. Unit Dynamica

Turn-On Delay TimeRise Time

Turn-Off Delay TimeFall Time

Turn-On Delay TimeRise Time

Turn-Off Delay TimeFall Time

Drain-Source Body Diode CharacteristicsContinuous Source-Drain Diode CurrentPulse Diode Forward CurrentBody Diode Voltage

Body Diode Reverse Recovery TimeBody Diode Reverse Recovery ChargeReverse Recovery Fall TimeReverse Recovery Rise Time

a

td(on) trtd(off) tftd(on) trtd(off) tf

Ch-1

Channel-1

VDD = 15 V, RL = 3 Ω ID ≅ 5 A, VGEN = 10 V, Rg = 1 ΩChannel-2

VDD = 15 V, RL = 3 Ω ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω

Ch-2Ch-1Ch-2Ch-1Ch-2Ch-1Ch-2Ch-1

Channel-1

VDD = 15 V, RL = 3 Ω ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 ΩChannel-2

VDD = 15 V, RL = 3 Ω ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω

Ch-2Ch-1Ch-2Ch-1Ch-2Ch-1Ch-2Ch-1Ch-2Ch-1Ch-2

IS = 1 AIS = 1 A

Ch-1Ch-2Ch-1Ch-2

Channel-1

IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °CChannel-2

IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C

Ch-1Ch-2Ch-1Ch-2Ch-1Ch-2

109101118181717121219181010

201820203535181635352424353520202.62.63030

Ans

ISISMVSDtrrQrrtatb

TC = 25 °C

0.460.7417177991087

0.511.134341418

VnsnC

ns

Notes:

a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximumrating conditions for extended periods may affect device reliability.

Document Number: 68790S09-2109-Rev. B, 12-Oct-09www.vishay.com

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Si4834CDYVishay SiliconixCHANNEL-1 TYPICAL CHARACTERISTICS 25°C, unless otherwise noted30VGS=10V thru4V24ID- DrainCurrent(A)ID- DrainCurrent(A)4518312VGS=3V62TC=25 °C1TC=125 °CTC=- 55 °C01234500.000.51.01.52.02.5VDS-Drain-to-SourceVoltage(V)VGS-Gate-to-SourceVoltage(V) Output Characteristics

0.0241200Transfer Characteristics

RDS(on)- On-Resistance(Ω)0.022C - Capacitance(pF)960Ciss0.020VGS=4.5V7200.018VGS=10V0.0180Coss240Crss0510152025300.01406121824300ID-DrainCurrent(A)VDS-Drain-to-SourceVoltage(V)On-Resistance vs. Drain Current

10ID=8AVGS- Gate-to-SourceVoltage(V)8VDS=10V6VDS=15VVDS=20V4RDS(on)- On-Resistance1.61.8ID=8ACapacitance

VGS=10V1.4(Normalized)1.2VGS=4.5V1.020.800.03.67.210.814.418.00.6- 50- 250255075100125150Qg-TotalGateCharge(nC)TJ-JunctionTemperature(°C)Gate Charge

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On-Resistance vs. Junction Temperature

Document Number: 68790S09-2109-Rev. B, 12-Oct-09

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Si4834CDY

Vishay SiliconixCHANNEL-1 TYPICAL CHARACTERISTICS 25°C, unless otherwise noted1000.10ID=8ARDS(on)- On-Resistance(Ω)10IS- SourceCurrent(A)TJ=150 °C1TJ=25 °C0.080.060.10.04TJ=125 °C0.02TJ=25 °C0.010.0010.00.000.20.40.60.81.01.20246810VSD-Source-to-DrainVoltage(V)VGS-Gate-to-SourceVoltage(V)Source-Drain Diode Forward Voltage

10-230VIR- Reverse Current(A)10-320VPower (W)3860On-Resistance vs. Gate-to-Source Voltage

10-410V2410-51210-60255075100125150TJ-JunctionTemperature(°C)00.0010.010.1Time (s)110Reverse Current (Schottky)

100LimitedbyRDS(on)*Single Pulse Power, Junction-to-Ambient

10ID-DrainCurrent(A)1ms110ms100ms0.1TA=25 °CSinglePulse0.010.01BVDSSLimited1s10sDC100110VDS-Drain-to-SourceVoltage(V)*VGS>minimumVGSatwhichRDS(on)isspecified0.1Safe Operating Area, Junction-to-AmbientDocument Number: 68790S09-2109-Rev. B, 12-Oct-09

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CHANNEL-1 TYPICAL CHARACTERISTICS 25°C, unless otherwise noted

108ID-DrainCurrent(A)PackageLimited200255075100125150TC-CaseTemperature(°C)Current Derating*

3.51.52.81.2Power(W)2.1Power(W)02550751001251500.91.40.60.70.30.00.00255075100125150TC-CaseTemperature(°C)TA-Ambient Temperature(°C)Power Derating, Junction-to-FootPower Derating, Junction-to-Ambient

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upperdissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the packagelimit.

www.vishay.com6Document Number: 68790S09-2109-Rev. B, 12-Oct-09

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Si4834CDY

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CHANNEL-1 TYPICAL CHARACTERISTICS 25°C, unless otherwise noted

1DutyCycle=0.5NormalizedEffectiveTransientThermalImpedance0.20.10.10.05PDMt1Notes:0.02t21.DutyCycle,D=2.PerUnitBase=RthJA=110 °C/Wt1t2SinglePulse0.0110-410-310-210-11103.TJM-TA=PDMZthJA(t)4.SurfaceMounted1001000SquareWavePulseDuration(s)Normalized Thermal Transient Impedance, Junction-to-Ambient1DutyCycle=0.5NormalizedEffectiveTransientThermalImpedance0.20.10.10.050.020.0110-4SinglePulse10-310-210-1110SquareWavePulseDuration(s)Normalized Thermal Transient Impedance, Junction-to-Foot

Document Number: 68790S09-2109-Rev. B, 12-Oct-09www.vishay.com

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Si4834CDYVishay SiliconixCHANNEL-2 TYPICAL CHARACTERISTICS 25°C, unless otherwise noted30VGS=10V thru4V24ID- DrainCurrent(A)ID- DrainCurrent(A)2430181812VGS=3V612TC=25 °C6TC=125 °CTC=- 55 °C01234500.000.51.01.52.02.5VDS-Drain-to-SourceVoltage(V)VGS-Gate-to-SourceVoltage(V) Output Characteristics

0.0241200 Transfer Characteristics

RDS(on)- On-Resistance(Ω)0.022C - Capacitance(pF)960Ciss0.020VGS=4.5V7200.018VGS=10V0.0180Coss240Crss0510152025300.01406121824300ID-DrainCurrent(A)VDS-Drain-to-SourceVoltage(V)On-Resistance vs. Drain Current

10ID=8AVGS- Gate-to-SourceVoltage(V)8VDS=10V6VDS=15VVDS=20V4RDS(on)- On-Resistance1.61.8ID=8ACapacitance

VGS=10V1.4(Normalized)1.2VGS=4.5V1.020.800.03.67.210.814.418.00.6- 50- 250255075100125150Qg-TotalGateCharge(nC)TJ-JunctionTemperature(°C)Gate Charge

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On-Resistance vs. Junction Temperature

Document Number: 68790S09-2109-Rev. B, 12-Oct-09

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Si4834CDY

Vishay SiliconixCHANNEL-2 TYPICAL CHARACTERISTICS 25°C, unless otherwise noted1000.10ID=8ARDS(on)- On-Resistance(Ω)10IS- SourceCurrent(A)TJ=150 °C1TJ=25 °C0.080.060.10.04TJ=125 °C0.02TJ=25 °C0.010.0010.00.000.20.40.60.81.01.20246810VSD-Source-to-DrainVoltage(V)VGS-Gate-to-SourceVoltage(V)Source-Drain Diode Forward Voltage

0.460On-Resistance vs. Gate-to-Source Voltage

0.2VGS(th)Variance(V)480.0Power (W)36- 0.2ID=5mA- 0.4ID=250 µA24- 0.612- 0.8- 50- 25025507510012515000.0010.010.1Time (s)110TJ-Temperature(°C)Threshold Voltage

100LimitedbyRDS(on)*Single Pulse Power, Junction-to-Ambient

10ID-DrainCurrent(A)1ms110ms100ms0.1TA=25 °CSinglePulse0.010.01BVDSSLimited1s10sDC100110VDS-Drain-to-SourceVoltage(V)*VGS>minimumVGSatwhichRDS(on)isspecified0.1Safe Operating Area, Junction-to-AmbientDocument Number: 68790S09-2109-Rev. B, 12-Oct-09

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CHANNEL-2 TYPICAL CHARACTERISTICS 25°C, unless otherwise noted

108ID-DrainCurrent(A)PackageLimited200255075100125150TC-CaseTemperature(°C)Current Derating*

3.51.52.81.2Power(W)2.1Power(W)02550751001251500.91.40.60.70.30.00.00255075100125150TC-CaseTemperature(°C)TA-Ambient Temperature(°C)Power Derating, Junction-to-FootPower Derating, Junction-to-Ambient

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upperdissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the packagelimit.

www.vishay.com10Document Number: 68790S09-2109-Rev. B, 12-Oct-09

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