专利名称：Method of fabricating semiconductor MOS
device
发明人：Shih-Chieh Pu,Ping-Hung Chiang,Chang-Po
Hsiung,Chia-Lin Wang,Nien-Chung Li,Wen-Fang Lee,Shih-Yin Hsiao,Chih-ChungWang,Kuan-Lin Liu
申请号：US15136982申请日：20160424公开号：US09577069B1公开日：20170221
专利附图：
摘要：A method of fabricating a MOS device is disclosed. A substrate having an activearea (AA) silicon portion and shallow trench isolation (STI) region surrounding the activearea is provided. A hard mask is formed on the substrate. A portion of the hard mask isremoved to form an opening on the AA silicon portion. The opening exposes an edge ofthe STI region. The AA silicon portion is recessed through the opening to a
predetermined depth to form a silicon spacer along a sidewall of the STI region in a self-aligned manner. An oxidation process is performed to oxidize the AA silicon portion andthe silicon spacer to form a gate oxide layer.
申请人：UNITED MICROELECTRONICS CORP.
地址：Hsin-Chu TW
国籍：TW
代理人：Winston Hsu,Scott Margo
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