DETECTING EFFECT OF CORRUPTING EVENT ON PRELOADED

专利名称：DETECTING EFFECT OF CORRUPTING EVENT

ON PRELOADED DATA IN NON-VOLATILEMEMORY

发明人：SEUNGJUNE JEON,IDAN ALROD,QING

LI,XIAOYU YANG

申请号：US14286571申请日：20140523

公开号：US20140281772A1公开日：20140918

专利附图：

摘要：A method includes determining a read threshold voltage corresponding to a

group of storage elements in a non-volatile memory that includes a three-dimensional(3D) memory of a data storage device. The method also includes determining an errormetric corresponding to data read from the group of storage elements using the readthreshold voltage. The method includes comparing the read threshold voltage and theerror metric to one or more criteria corresponding to a corrupting event.

申请人：SANDISK TECHNOLOGIES INC.

地址：Plano TX US

国籍：US

更多信息请下载全文后查看