KSP42/43KSP42/43
High Voltage Transistor
•Collector-Emitter Voltage: VCEO=KSP42: 300V
KSP43: 200V
•Collector Power Dissipation: PC(max)=625mW
1
TO-92
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
SymbolVCBO VCEO
Collector Base Voltage
: KSP42 : KSP43
Collector-Emitter Voltage
: KSP42 : KSP43
VEBOICPCTJTSTG
Emitter-Base VoltageCollector Current
Collector Power DissipationJunction TemperatureStorage Temperature
Parameter
1. Emitter 2. Base 3. Collector
Value3002003002006500625150-55 ~ 150
UnitsVVVVVmAmW°C°C
Electrical Characteristics Ta=25°C unless otherwise noted
SymbolBVCBO
Parameter
Collector-Base Breakdown Voltage
: KSP42 : KSP43* Collector -Emitter Breakdown Voltage
: KSP42 : KSP43Emitter-Base Breakdown VoltageCollector Cut-off Current
: KSP42 : KSP43
Emitter Cut-off Current
: KSP42 : KSP43
* DC Current Gain
VBE=6V, IC=0VBE=4V, IC=0VCE=10V, IC=1mAVCE=10V, IC=10mA VCE=10V, IC=30mA IC=20mA, IB=2mAIC=20mA, IB=2mAVCB=20V, IE=0f=1MHz
VCE=20V, IC=10mA f=100MHz
502040
0.50.934
VVpFpFMHz
100100
nAnA
VCB=200V, IE=0VCB=160V, IE=0Test Condition
IC=100µA, IE=0
Min.300200
IC=1mA, IB=0
3002006
100100
nAnA
Max.
UnitsVVVVV
BVCEO
BVEBOICBO
IE=100µA, IC=0
IEBO
hFE
VCE (sat)VBE (sat)Cob
* Collector-Emitter Saturation Voltage* Base-Emitter Saturation VoltageOutput Capacitance
: KSP42 : KSP43
Current Gain Bandwidth Product
fT
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2002 Fairchild Semiconductor CorporationRev. A2, September 2002
元器件交易网www.cecb2b.com
KSP42/43Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE100010IC = 10 IBhFE, DC CURRENT GAINVCE = 10V1VBE(sat)100 0.1VCE(sat)101101000.01110100IC[mA], COLLECTOR CURRENTIC[mA], COLLECTOR CURRENTFigure 1. DC current GainFigure 2. Collector-Emitter Saturation VoltageBase-Emitter Saturation Voltage 100 fT[MHz],CURRENT GAIN BANDWIDTH PRODUCTIE = 0f = 1MHz 120100Ccb [pF], CAPACITANCEVCE = 20V801060 402010.10110100110100VCB [V], COLLECTOR-BASE VOLTAGEIC[mA], COLLECTOR CURRENTFigure 3. Collector-Base CapacitanceFigure 4. Current Gain Bandwidth Product©2002 Fairchild Semiconductor CorporationRev. A2, September 2002
元器件交易网www.cecb2b.com
KSP42/43Package DimensionsTO-924.58–0.15+0.250.46 ±0.1014.47 ±0.404.58 ±0.201.27TYP[1.27 ±0.20]3.60 ±0.201.27TYP[1.27 ±0.20]0.38–0.05+0.103.86MAX1.02 ±0.100.38–0.05+0.10(R2.29)(0.25)Dimensions in Millimeters©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
元器件交易网www.cecb2b.com
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1. Life support devices or systems are devices or systemswhich, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to performwhen properly used in accordance with instructions for useprovided in the labeling, can be reasonably expected toresult in significant injury to the user.
2. A critical component is any component of a life supportdevice or system whose failure to perform can bereasonably expected to cause the failure of the life supportdevice or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONSDefinition of Terms
Datasheet IdentificationAdvance Information
Product StatusFormative or In DesignFirst Production
Definition
This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.
This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.
Preliminary
No Identification NeededFull Production
ObsoleteNot In Production
©2002 Fairchild Semiconductor CorporationRev. I1
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