Sequential in-situ heating and deposition of halog

专利名称：Sequential in-situ heating and deposition of

halogen-doped silicon oxide

发明人：Laxman Murugesh,Maciek Orczyk,Pravin

Narawankar,Jianmin Qiao,Turgut Sahin

申请号：US09819255申请日：20010327

公开号：US20010020447A1公开日：20010913

摘要：A low dielectric constant insulating film on a substrate is formed by introducinga process gas comprising a silicon source, a fluorine source, and oxygen into a chamber.The process gas is formed into a plasma to deposit at least a first portion of theinsulating film over the substrate. The wafer and the first portion of the insulating filmare then heated to a temperature of about 100-500° C. for a period of time. The film mayinclude several separate portions, the deposition of each of which is followed by aheating step. The film has a low dielectric constant and good gap-fill and stability due tothe lack of free fluorine in the film.

申请人：MURUGESH LAXMAN,ORCZYK MACIEK,NARAWANKAR PRAVIN,QIAOJIANMIN,SAHIN TURGUT

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