Semiconductor device having a trench gate and meth

专利名称：Semiconductor device having a trench gate

and method of fabricating the same

发明人：Shian-Jyh Lin,Chien-Li Cheng,Chung-Yuan

Lee,Jeng-Ping Lin,Pei-Ing Lee

申请号：US11521639申请日：20060914

公开号：US20070190712A1公开日：20070816

专利附图：

摘要：A method of fabricating a semiconductor device having a trench gate is

provided. First, a semiconductor substrate having a trench etch mask thereon is provided.

The semiconductor substrate is etched to form a trench having a sidewall and a bottomusing the trench etch mask as a shield. Impurities are doped into the semiconductorsubstrate through the trench to form a doped region. The semiconductor substrateunderlying the trench is etched to form an extended portion. A gate insulating layer isformed on the trench and the extended portion. A trench gate is formed in the trenchand the extended portion.

申请人：Shian-Jyh Lin,Chien-Li Cheng,Chung-Yuan Lee,Jeng-Ping Lin,Pei-Ing Lee

地址：Taipei County TW,Hsinchu City TW,Taoyuan City TW,Taoyuan CountyTW,Changhua County TW

国籍：TW,TW,TW,TW,TW

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