专利名称：METHOD FOR PROCESSING
SEMICONDUCTOR WAFER, METHOD FORMANUFACTURING IC CARD, AND CARRIER
发明人：MIYAMOTO, TOSHIO,TSUBOSAKI,
KUNIHIRO,USAMI, MITSUO
申请号：EP96932799申请日：19961002公开号：EP0866494A4公开日：20000322
摘要：The semiconductor wafer is made thin without any cracks and warp under goodworkability. The semiconductor wafer thinning process includes the first step ofpreparing a carrier 1 formed of a base 1a and a suction pad 1b provided on one surfaceof the base 1a or formed of a base film with an adhesive, the second step of bonding asemiconductor wafer to the carrier 1 in such a manner that a rear surface of the
semiconductor wafer 2 with no circuit elements formed therein is opposite to the carrierto form a wafer composite 10, and the third step of holding the carrier of the wafercomposite 10 with its semiconductor wafer 2 side up and spin-coating an etchant on therear surface of the semiconductor wafer 2 thereby to make the semiconductor wafer 2thin.
申请人：HITACHI, LTD.
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