专利名称：FIELD EFFECT TRANSISTOR AND METHOD
OF FABRICATION
发明人：Hoon Kim,Kisik Choi,Chanro Park申请号：US14967797申请日：20151214
公开号：US20160099333A1公开日：20160407
专利附图：
摘要：An improved field effect transistor and method of fabrication are disclosed. Abarrier layer stack is formed in the base and sidewalls of a gate cavity. The barrier layerstack has a first metal layer and a second metal layer. A gate electrode metal is
deposited in the cavity. The barrier layer stack is thinned or removed on the sidewalls ofthe gate cavity, to more precisely control the voltage threshold of the field effecttransistor.
申请人：GLOBALFOUNDRIES INC.
地址：Grand Cayman KY
国籍：KY
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