Circuit for detecting refresh address signals of a

专利名称：Circuit for detecting refresh address signals

of a semiconductor memory device

发明人：Kang, Kyung-Woo申请号：EP93106502.3申请日：19930421公开号：EP0567104A2公开日：19931027

专利附图：

摘要：Disclosed is a refresh address test circuit of a semiconductor memory devicehaving a self-refresh function using a plurality of internal refresh address signals,comprising a plurality of the address test paths, each including a first sub-path with an

initial logic level of the refresh address signal and a second sub-path of refresh addresssignal, a plurality of comparators, each receiving the initial logic level of the refreshaddress signal from the first sub-path and a present logic level of the refresh addresssignal from the second sub-path, a test output circuit for receiving the output signalsgenerated from the plurality of comparators.

申请人：SAMSUNG ELECTRONICS CO., LTD.

地址：416 Maetan-3 Dong, Paldal-ku Suwon-city, Kyungki-do 441-373 KR

国籍：KR

代理机构：Grünecker, Kinkeldey, Stockmair & Schwanhäusser Anwaltssozietät

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