Poly-buffered LOCOS

专利名称：Poly-buffered LOCOS发明人：Kuo-Hua Lee,Chen-Hua D. Yu申请号：US08/351977申请日：19941208公开号：US05599730A公开日：19970204

摘要：A method of field oxide formation which creates field oxides of comparativelyuniform height between differently-spaced oxidation masks is disclosed. A patternedoxidation mask, typically silicon nitride, (possibly with underlying polysilicon) is formed. Ablanket layer of polysilicon is formed and etched back, thereby filling spaces betweenclosely-spaced portions of the oxidation mask and fillets between less- closely spacedportions. A thermal oxidation is performed to produce a field oxide. The field oxide hascomparatively uniform height despite differences in oxidation mask spacing.

申请人：LUCENT TECHNOLOGIES INC.

代理人：John T. Rehberg

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